K1S3216B1C memory equivalent, 2mx16 bit uni-transistor random access memory.
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UtRAM
GENERAL DESCRIPTION
The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transist.
The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual .
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